Intermediate semiconductor device structures using photopatternable, dielectric materials

ABSTRACT

A cap layer that enables a photopatternable, spin-on material to be used in the formation of semiconductor device structures at wavelengths that were previously unusable. The photopatternable, spin-on material is applied as a layer to a semiconductor substrate. The cap layer and a photoresist layer are each formed over the photopatternable layer. The cap layer absorbs or reflects radiation and protects the photopatternable layer from a first wavelength of radiation used in patterning the photoresist layer. The photopatternable, spin-on material is convertible to a silicon dioxide-based material upon exposure to a second wavelength of radiation.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of application Ser. No. 10/435,791,filed May 12, 2003, pending.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to semiconductor processing technologyand, more specifically, to using spin-on, photopatternable, interlayerdielectric materials at additional wavelengths of radiation.

2. State of the Art

Photoresist layers are used for making miniaturized electroniccomponents when fabricating semiconductor devices, such as computerchips and integrated circuits. During fabrication, a thin photoresistlayer is typically applied to a semiconductor substrate. The photoresistlayer is then baked to evaporate solvent in the photoresist and to fixthe photoresist onto the semiconductor substrate. To form a pattern onthe photoresist layer, portions of the layer are exposed to radiation,such as visible light, ultraviolet (“UV”) light, electron beam (“EB”),or X-ray radiant energy, through a mask. The radiation causes aphotochemical reaction in portions of the photoresist layer that areexposed to the radiation, which changes the solubility of theseportions. The solubility of unexposed portions of the photoresist layeris unchanged. The semiconductor substrate is treated with a developersolution that is selected to solubilize and remove the radiation-exposedportions of the photoresist layer. Since the exposed portions of thephotoresist layer are removed, a desired pattern is formed in thephotoresist layer. The pattern is transferred to underlying layers ofthe semiconductor device by conventional techniques, such as by wet ordry etching processes. The remaining portions of the photoresist layerare removed once the pattern is transferred to the underlying layers ofthe semiconductor device.

As memory requirements for the semiconductor devices have increased, thesize of the electronic components in the semiconductor devices hasdecreased. To accomplish the decreased size, new photoresist materialssensitive to short wavelengths of radiation have been developed becausethe short wavelengths provide better resolution of features on thesemiconductor devices. As used herein, the term “short wavelength”refers to a wavelength of approximately 100 nm to approximately 300 nm.Photoresist materials sensitive to this wavelength range are typicallyused when subhalfmicron geometries are required. For instance,photoresist materials sensitive to 248 nm are currently being used whilephotoresist materials sensitive to 193 nm are under development.

Spin-on, photo patternable, interlayer dielectric (“ILD”) materials areknown in the art and are available from sources, such as ClariantInternational, Ltd. (Muttenz, Switzerland). These ILD materials arephotoresist materials that are convertible to a silica-type ceramic filmwhen exposed to radiation. As disclosed in EP 1239332 to Nagahara etal., a photoresist composition that includes a polysilazane (“PSZ”)compound and a photoacid generator (“PAG”) is applied to a semiconductorwafer to form a photoresist layer. The photoresist layer is exposed toUV radiation, such as radiation of 360-430 nm, or EB radiation through amask. In the exposed, or unmasked, portions of the photoresist layer,the radiation initiates the photochemical reaction and produces protonsfrom the PAG. The protons are generated from an acid, which is producedby the photochemical reaction. No reaction occurs in the unexposed, ormasked, portions of the photoresist layer and, therefore, no protons areproduced in these portions of the photoresist layer. The protons reactwith oxygen (“O₂”) and/or water (“H₂O”) in the atmosphere to cleave Si—Nbonds that are present in the PSZ. Subsequently, H₂O reacts with thecleaved PSZ to form a methyl silsesquioxane (“MSQ”), which contains Si—Obonds. Since the protons are only formed in the exposed portions of thephotoresist layer, selected portions of the photoresist layer areconverted to the silica-type ceramic film. The silica-type ceramic filmis selectively removed using tetramethylammonium hydroxide (“TMAH”),leaving the unexposed portions of the photoresist layer to create thedesired pattern on the semiconductor substrate. These remaining portionsare subsequently exposed to radiation of 360-430 nm to convert thephotoresist layer into the silica-type ceramic film. The silica-typeceramic film has a low dielectric constant, has good insulatingproperties, is resistant to heat, abrasion, and corrosion, and is usedin semiconductor devices, liquid crystal displays, and printed circuitsubstrates to form ILDs.

Additional photoresist materials that are convertible to an insulativematerial by exposure to radiation are disclosed in U.S. Pat. No.6,350,706 to Howard. A plasma polymerized methylsilane is selectivelyconverted to photo-oxidized siloxane, an insulative material, byexposure to deep ultraviolet (“DUV”) radiation. Semiconductor devicestructures are formed by converting exposed portions of the photoresistmaterial to the insulative material. By converting the photoresistmaterial into the insulative material, a permanent structure is formedand the photoresist material does not have to be removed by an etchprocess.

One disadvantage of these photoresist materials is that they aresensitive to a single wavelength or narrow range of wavelengths. Inother words, the conversion of the PSZ to the silica-type ceramic filmoccurs most efficiently at that wavelength(s), which typically rangesfrom 360-430 nm. At these wavelengths, a high degree of resolution isnot possible, such as the resolution achieved by the 193 nm or 243 nmphotoresists currently being developed and used. However, these latterwavelengths (193 nm or 243 nm) do not efficiently convert the PSZ to thesilica-type ceramic film. Therefore, the application of thesephotoresist or ILD materials for front-end applications, where a shortwavelength is essential to achieve the desired resolution, is severelylimited. In addition, it is not possible to optimize both the patterningprocess and the conversion process and, as such, a user must compromise,or choose between, achieving each of these processes.

It would be desirable to be able to use the ILD materials at additionalwavelengths, especially short wavelengths, so that the ILD materials areuseful in a broader range of applications. It would also be desirable tobe able to perform both the patterning process and the conversionprocess at conditions optimal for each process without having tocompromise between achieving optimal patterning and optimal conversion.

BRIEF SUMMARY OF THE INVENTION

The present invention comprises a method of forming an intermediatesemiconductor device structure. The method comprises providing asemiconductor substrate and forming a photopatternable layer over thesemiconductor substrate. The photopatternable layer may comprise anorganosilicon photoresist material that is formulated to be selectivelyconverted to a silicon dioxide-based material, such as a silsesquioxanematerial, upon exposure to radiation. A cap layer and a photoresistlayer may be formed over the photopatternable layer. The cap layer maycomprise a material that absorbs or reflects radiation, such as adielectric antireflective coating (“DARC”), a bottom antireflectivecoating (“BARC”), or a metal coating. The cap layer may compriseamorphous or diamond-like carbon. When the photoresist layer is exposedto a first wavelength of radiation, which may be used to produce a highresolution pattern in the photoresist layer, the cap layer protects thephotopatternable layer from the first wavelength. However, the highresolution pattern may be subsequently transferred into thephotopatternable layer by photolithography and etching techniques.Exposed portions of the photopatternable layer may be selectivelyconverted to a silicon dioxide-based material by exposure to a secondwavelength of radiation.

The present invention also encompasses an intermediate semiconductordevice structure. The intermediate semiconductor device structure maycomprise a semiconductor substrate and a photopatternable layer formedover the semiconductor substrate. The photopatternable layer maycomprise an organosilicon photoresist material that is formulated to beselectively converted to a silicon dioxide-based material upon exposureto radiation. A cap layer formed from a material that absorbs orreflects radiation may be formed over at least a portion of thephotopatternable layer. A photoresist layer may be formed over at leasta portion of the cap layer. The photoresist layer may be sensitive to awavelength ranging from approximately 100 nm to approximately 500 nm,which may be used to produce a high resolution pattern in thephotoresist layer and the cap layer. The cap layer protects thephotopatternable layer from exposure to this radiation. The highresolution pattern may be subsequently transferred into thephotopatternable layer by photolithography and etching techniques.Exposed portions of the photopatternable layer may be selectivelyconverted to a silicon dioxide-based material by exposure to a differentwavelength of radiation.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

While the specification concludes with claims particularly pointing outand distinctly claiming that which is regarded as the present invention,the advantages of this invention can be more readily ascertained fromthe following description of the invention when read in conjunction withthe accompanying drawings in which:

FIGS. 1A-1G show a process sequence of semiconductor device structuresin accordance with the present invention; and

FIGS. 2A-2H show a process sequence of semiconductor device structuresin accordance with the present invention resulting in an embodimenthaving a self-aligned contact.

DETAILED DESCRIPTION OF THE INVENTION

A photopatternable, spin-on material that is usable at additionalwavelengths of radiation is disclosed. The photopatternable, spin-onmaterial is applied to a semiconductor substrate as a layer and iscovered by a cap layer that absorbs or reflects radiation. The cap layerprotects the photopatternable layer from the radiation by blockingradiation from passing into the photopatternable layer.

The methods and structures described herein do not form a completeprocess flow for manufacturing semiconductor devices. The remainder ofthe process flow is known to those of ordinary skill in the art.Accordingly, only the process steps and structures necessary tounderstand the present invention are described.

As shown in FIG. 1A, a photopatternable layer 4 may be formed over asemiconductor substrate 2, which includes a semiconductor wafer or othersubstrate comprising a layer of semiconductor material. As used herein,the term “semiconductor substrate” includes silicon wafers, silicon oninsulator (“SOI”) substrates, silicon on sapphire (“SOS”) substrates,epitaxial layers of silicon on a base semiconductor foundation and othersemiconductor materials such as silicon-germanium, germanium, galliumarsenide and indium phosphide.

The photopatternable layer 4 may be formed from a material that isformulated to be selectively converted to a silicon dioxide(“SiO₂”)-based material by exposure to radiation. The SiO₂-basedmaterial may include SiO₂ and derivatives thereof, such as alkylated orotherwise modified derivatives. The material of the photopatternablelayer 4 may include an organosilicon photoresist material, such as asilicon polymer, a polysilyne, or a PSZ compound, and may be selected byone of ordinary skill in the art depending on the desired properties ofthe photopatternable layer 4. As used herein, the term “polysilazane” orPSZ refers to an oligomer, cyclic, polycyclic, linear polymer orresinous polymer having multiple Si—N repeating units. In oneembodiment, the organosilicon photoresist material is a conventional PSZcompound. The photopatternable layer 4 may include a singleorganosilicon photoresist material or a mixture of organosiliconphotoresist materials. For instance, if a PSZ compound is used, the PSZcompound may be a single PSZ compound, a mixture of multiple types ofPSZ compounds, or a PSZ copolymer. The PSZ may have a linear, cyclic, orcross-linked structure. PSZ compounds are known in the art and may besynthesized by any known techniques, such as those disclosed in U.S.Pat. No. 5,905,130 to Nakahara et al.

The SiO₂-based material into which the material of the photopatternablelayer 4 may be selectively converted is a silsesquioxane material(“SSQ”), which has Si—O bonds. SSQ materials are known in the art andinclude, but are not limited to, hydrogen silsesquioxane (“HSQ”), methylsilsesquioxane (“MSQ”), polyhydrogen silsesquioxane (“pHSQ”), hydriopolysilsesquioxane (“H-PSSQ”), methyl polysilsesquioxane (“M-PSSQ”), andphenyl polysilsesquioxane (“P-PSSQ”). In one embodiment, the SiO₂-basedmaterial is MSQ.

The photopatternable layer 4 may include a PAG to initiate thephotochemical reaction that selectively converts the organosiliconphotoresist material of the photopatternable layer 4 into the SiO₂-basedmaterial. The PAG may be a triazine, an oxazole, an oxadiazole, athiazole, a substituted 2-pyrone, a sulfone compound, a sulfonatecompound, or an -onium salt compound, such as a diazonium salt, aniodonium salt, or a sulfonium salt, halide, or ester. In one embodiment,the photopatternable layer 4 includes the PSZ compound and the PAG.

The photopatternable layer 4 may be formed on the semiconductorsubstrate 2 by a conventional coating technique including, but notlimited to, dip coating, bar coating, spin coating, roll coating, spraycoating, and flow coating. The coating technique used to deposit thephotopatternable layer 4 may depend on the material used in thephotopatternable layer 4. In one embodiment, the photopatternable layer4 is spin-coated onto the semiconductor substrate 2. Thephotopatternable layer 4 may be formed to a thickness of approximately0.05 μm to 4 μm.

A cap layer 6 may be formed over the photopatternable layer 4, as shownin FIG. 1B. The cap layer 6 prevents activation of the PAG by blockingradiation from passing into the photopatternable layer 4. The cap layer6 may be formed from a highly light-absorbing or highly light-reflectivematerial including, but not limited to, a DARC, a BARC, and a metalcoating. These coatings may be conventional inorganic or organiccoatings. For example, the cap layer 6 may include, but is not limitedto, amorphous carbon (“α-carbon”), silicon carbide, titanium nitride(“TiN”), silicon nitride (“SiN”), and silicon oxynitride (“SiON”). Thecap layer 6 may be deposited by conventional deposition techniques. Forinstance, inorganic or metallic coatings may be deposited by CVD(“chemical vapor deposition”), vacuum deposition, or sputtering. Organiccoatings may be deposited by spin coating.

The cap layer 6 may be formed at a sufficient thickness to preventradiation from passing into the photopatternable layer 4. However, thethickness of the cap layer 6 may be limited by the ability to etch thecap layer 6 during subsequent processing of the semiconductor devicestructure. For example, if the cap layer 6 is too thick, it may not bepossible to etch the cap layer 6 as desired. For sake of example only,the cap layer 6 may be thicker than approximately 10 nm (100 Angstroms(“Å”)). If the cap layer 6 is formed from α-carbon, it may beapproximately 1000-2000 Åthick. If the cap layer 6 is formed from SiON,the thickness may be less than approximately 400 Å. If the cap layer 6is formed from a BARC, the thickness may be greater than approximately300-3000 Å.

A photoresist layer 8 may be formed over the cap layer 6, as illustratedin FIG. 1C. The photoresist layer 8 may be formed from a conventionalphotoresist material that is capable of providing a high resolutionpattern. For instance, the photoresist layer 8 may be formed from aphotoresist material sensitive to a short wavelength, such as awavelength ranging from approximately 100 nm to approximately 500 nm.For instance, the photoresist material may be sensitive to a wavelengthof 193 nm or 248 nm.

Conventional photolithography and etch processes may be used to providethe desired pattern in the photoresist layer 8 and cap layer 6. Portionsof the photoresist layer 8 may be exposed to a first wavelength 10 ofradiation through a mask (not shown). The first wavelength 10 ofradiation may be UV radiation, DUV radiation, or X-ray radiation. Withthe cap layer 6 present, the first wavelength 10 of radiation may notpass into the photopatternable layer 4. Rather, the cap layer 6 mayabsorb or reflect the first wavelength 10, protecting thephotopatternable layer 4 from undesirable exposure. Therefore, anintermediate semiconductor device structure that includes the cap layer6 may be exposed to any wavelength of radiation as the first wavelength10. In other words, the intermediate semiconductor device structure maybe exposed to any wavelength of radiation, such as the wavelength thatis most efficient to pattern the photoresist layer 8, and is not limitedto the wavelength that is most efficient to initiate the PAG. In oneembodiment, the first wavelength ranges from approximately 100 nm toapproximately 300 nm.

The exposed portions of the photoresist layer 8 may be removed using aconventional developer solution, such as an aqueous solution of TMAH,choline, sodium silicate, sodium hydroxide, or potassium hydroxide. Itis also contemplated that unexposed portions of the photoresist layer 8may be removed, instead of the exposed portions, by utilizing adifferent developer solution that may be selected by one of ordinaryskill in the art. The pattern in the photoresist layer 8 may be extendedthrough the cap layer 6 to expose a portion of the photopatternablelayer 4, as shown in FIG. ID. Since the high resolution photoresist isused in the photoresist layer 8, the pattern transferred to thephotopatternable layer 4 may also have a high resolution.

With the cap layer 6 and photoresist layer 8 overlying portions of thephotopatternable layer 4 (portions that were not exposed to the firstwavelength of radiation), the intermediate semiconductor devicestructure may be exposed to a second wavelength 14 of radiation, asshown in FIG. 1E. The second wavelength 14 may be a sufficientwavelength to activate the PAG in exposed portions of thephotopatternable layer 4 and initiate the photochemical reaction. Forinstance, the second wavelength 14 may be the wavelength or wavelengthrange that most effectively activates the PAG. The second wavelength 14of radiation may be UV radiation, DUV radiation, or X-ray radiation. Theactivated PAG may produce protons (or the acid) that react with theorganosilicon photoresist material of the photopatternable layer 4. Thephotochemical reaction converts the exposed portions of thephotopatternable layer 4 into SiO₂-based portion 12 by cleaving Si—Nbonds in the exposed portions of the photopatternable layer 4 andforming Si—O bonds. Since the PAG is only activated in the exposedportions, the photochemical reaction only occurs in these portions,causing selective conversion of the photopatternable layer 4 to theSiO₂-based portion 12.

Since the cap layer 6 overlies portions of the photopatternable layer 4,the intermediate semiconductor device structure may be patterned at anywavelength of radiation, without that radiation impacting theunderlying, unexposed, portions of the photopatternable layer 4.However, the exposed portions of the photopatternable layer 4 maysubsequently be selectively converted to the SiO₂-based portion 12.Therefore, the patterning and the conversion processes may be performedat a wavelength optimal for each process without compromising betweenachieving a high resolution pattern and efficient conversion of thephotopatternable layer 4 to the SiO₂-based portion 12.

As shown in FIG. 1F, the photoresist layer 8 and the cap layer 6 may beremoved from the intermediate semiconductor device structure byconventional wet or dry etching processes. The photoresist layer 8 andthe cap layer 6 may be removed by an etching process that simultaneouslyremoves both layers without etching the photopatternable layer 4. Forexample, if the cap layer 6 is formed from α-carbon, an oxygen plasmamay be used to simultaneously remove the cap layer 6 and the photoresistlayer 8. The cap layer 6 and the photoresist layer 8 may also be removedseparately by multiple etching processes.

The remaining portions of the photopatternable layer 4 may be convertedto SiO₂-based portions 12′ by exposure to the appropriate wavelength ofradiation, as shown in FIG. 1G. If desired, the SiO₂-based portions 12′may be subsequently converted to SiO₂ by conventional techniques, suchas by ashing in oxygen at a temperature greater than approximately 200°C., followed by an anneal in oxygen or by a steam anneal.

It is also contemplated that the cap layer 6 may remain on thesemiconductor substrate 2 after the necessary photolithography andetching processes have been performed. For instance, if the material ofthe photopatternable layer 4 is sufficiently stable, it may not benecessary to convert the photopatternable layer 4 to the SiO₂-basedmaterial to increase its stability and, therefore, it may not benecessary to remove the remaining portions of the cap layer 6.

In one embodiment, a self-aligned contact (“SAC”) is formed. The SAC maybe formed between transistor gate structures, such as in a DRAM memorycell array. As shown in FIG. 2A, the transistor gate structures 20 maybe formed on the semiconductor substrate 22. These transistor gatestructures 20 are formed by conventional techniques and may include aplurality of layers, such as a polysilicon layer, a tungsten silicidelayer, and a plurality of insulative layers. A photopatternable layer 24may be deposited over the transistor gate structures 20 to fill inspaces between the transistor gate structures 20. Although twotransistor gate structures 20 are shown in FIG. 2A, it is understoodthat any number of transistor gate structures 20 may be present.

As shown in FIGS. 2B and 2C, a cap layer 26 and photoresist layer 28 maybe deposited over the photopatternable layer 24 and patterned aspreviously described to expose portions of the photopatternable layer24. The exposed portions of the photopatternable layer 24 may be exposedto a first wavelength 25 of radiation. As shown in FIGS. 2D and 2E, theexposed portions of the photopatternable layer 24 pattern may be exposedto the second wavelength 23 of radiation, which has a wavelength mosteffective to convert these portions to a SiO₂-based material, to produceSiO₂-based portion 27. The unexposed portions of the photopatternablelayer 24 are protected by the cap layer 26 and, therefore, protons arenot produced from the PAG in those portions. As shown in FIG. 2F, theSiO₂-based portion 27 may be removed using an etchant selective for theSiO₂-based material, leaving a portion of the surface of thesemiconductor substrate 22 exposed. The photoresist layer 28 and the caplayer 26 may be removed, as shown in FIGS. 2G and 2H, and remainingportions of the photopatternable layer 24 converted to SiO₂-basedportions 27′ by exposure to radiation.

The SAC may be formed in the etched areas between the transistor gatestructures 20. As shown in the art, a contact layer of the SAC may beformed from polysilicon, copper, aluminum, tungsten silicide, or anotherconductive contact material.

It is also contemplated that the cap layer described herein may be usedto form additional semiconductor device structures including, but notlimited to, self-aligned vias, dielectric layers, trenches, shallowtrench isolation, conductors, insulators, capacitors, gates, andsource/drain junctions. These semiconductor device structures may beused in the fabrication of semiconductor memory devices, such as dynamicrandom access memories (“DRAMs”), static random access memories(“SRAMs”), synchronous DRAMs (“SDRAMS”), FLASH memories, and othermemory devices. For instance, in the formation of the self-aligned via,the cap layer may be deposited, as previously described, over a firstmetal structure. The cap layer may include an antireflective coating,such as a DARC or TiN. A photopatternable layer including a PSZ compoundand a PAG may be formed over the first metal structure and the caplayer. The photopatternable layer and the cap layer may be removed atlocations from which the self-aligned via is to extend down from asecond metal structure. When an intermediate semiconductor devicestructure is exposed to radiation, a reflection of the radiation fromthe first metal structure may be used to enhance the activation of thePAG. This may be achieved by controlling an amount, or dose, ofradiation reflected from the first metal structure. Only when the doseof radiation is sufficient may the PAG be sufficiently activated toconvert the photopatternable layer to the SiO₂-based material. TheSiO₂-based material may subsequently be removed to create theself-aligned via. Since formation of the self-aligned via depends on thereflection of radiation from the first metal structure, the resultingvia is self-aligned.

As described herein, the cap layer may be used to isolate the patterningprocess and the conversion process so that conditions of each of theseprocesses may be optimized without impacting the other process. In otherwords, the wavelength most optimal to performing the patterning processmay be used to pattern the intermediate semiconductor device structurewhile the wavelength most optimal to converting the organosiliconphotoresist material to the SiO₂-based material may also be used. Thecap layer prevents the radiation from penetrating into thephotopatternable layer and, therefore, allows the intermediatesemiconductor device structure to be exposed to wavelengths of radiationthat were previously unusable.

While the invention may be susceptible to various modifications andalternative forms, specific embodiments have been shown by way ofexample in the drawings and have been described in detail herein.However, it should be understood that the invention is not intended tobe limited to the particular forms disclosed. Rather, the invention isto cover all modifications, equivalents, and alternatives falling withinthe spirit and scope thereof as defined by the following appendedclaims.

1. An intermediate semiconductor device structure, comprising: asemiconductor substrate; a photopatternable layer formed over thesemiconductor substrate, wherein the photopatternable layer comprises amaterial that is formulated to be selectively converted to a silicondioxide-based material by exposure to radiation; a cap layer formed overthe photopatternable layer; and a photoresist layer formed over the caplayer.
 2. The intermediate semiconductor device structure of claim 1,wherein the photopatternable layer comprises an organosiliconphotoresist material selected from the group consisting of siliconpolymer, a polysilyne compound, and a polysilazane compound.
 3. Theintermediate semiconductor device structure of claim 1, wherein thephotopatternable layer comprises a photoacid generator.
 4. Theintermediate semiconductor device structure of claim 1, wherein thesilicon dioxide-based material comprises silicon dioxide or alkylatedderivatives thereof.
 5. The intermediate semiconductor device structureof claim 1, wherein the silicon dioxide-based material comprises asilsesquioxane material.
 6. The intermediate semiconductor devicestructure of claim 1, wherein the photopatternable layer comprises amaterial selected from the group consisting of hydrogen silsesquioxane,methyl silsesquioxane, polyhydrogen silsesquioxane, hydriopolysilsesquioxane, methyl polysilsesquioxane, and phenylpolysilsesquioxane.
 7. The intermediate semiconductor device structureof claim 1, wherein the cap layer comprises a material that preventsradiation from passing into the photopatternable layer.
 8. Theintermediate semiconductor device structure of claim 1, wherein the caplayer comprises a highly light-absorbing or a highly light-reflectivematerial.
 9. The intermediate semiconductor device structure of claim 1,wherein the cap layer comprises a dielectric antireflective coating, abottom antireflective coating, or a metal coating.
 10. The intermediatesemiconductor device structure of claim 9, wherein the material used inthe cap layer is selected from the group consisting of amorphous carbon,silicon carbide, titanium nitride, silicon nitride, and siliconoxynitride.
 11. The intermediate semiconductor device structure of claim1, wherein the cap layer has a sufficient thickness to prevent radiationfrom passing into the photopatternable layer.
 12. The intermediatesemiconductor device structure of claim 1, wherein the cap layer has athickness of greater than approximately 10 nm.
 13. The intermediatesemiconductor device structure of claim 1, wherein the photoresist layercomprises a photoresist material capable of providing a high resolutionpattern.
 14. The intermediate semiconductor device structure of claim 1,wherein the photoresist layer comprises a photoresist material sensitiveto a wavelength from approximately 100 nm to approximately 500 nm. 15.The intermediate semiconductor device structure of claim 1, wherein thephotoresist layer comprises a photoresist material sensitive to awavelength of approximately 193 nm or approximately 248 nm.
 16. Theintermediate semiconductor device structure of claim 1, wherein at leasta first portion of the photoresist layer has been removed and at least asecond portion of the photoresist layer remains and wherein at least afirst portion of the cap layer has been removed and at least a secondportion of the cap layer remains.
 17. The intermediate semiconductordevice structure of claim 1, wherein at least a portion of thephotopatternable layer comprises a silicon dioxide-based material. 18.The intermediate semiconductor device structure of claim 17, wherein thesilicon dioxide-based material has been removed from thephotopatternable layer.
 19. An intermediate semiconductor devicestructure, comprising: a semiconductor substrate; a photopatternablelayer formed over the semiconductor substrate, wherein thephotopatternable layer comprises a material that is formulated to beselectively converted to a silicon dioxide-based material by exposure toradiation; a cap layer formed over at least a portion of thephotopatternable layer; and a photoresist layer formed over at least aportion of the cap layer.
 20. The intermediate semiconductor devicestructure of claim 19, wherein the photopatternable layer comprises anorganosilicon photoresist material selected from the group consisting ofsilicon polymer, a polysilyne compound, and a polysilazane compound. 21.The intermediate semiconductor device structure of claim 19, wherein thephotopatternable layer comprises a photoacid generator.
 22. Theintermediate semiconductor device structure of claim 19, wherein thesilicon dioxide-based material comprises silicon dioxide or alkylatedderivatives thereof.
 23. The intermediate semiconductor device structureof claim 19, wherein the silicon dioxide-based material comprises asilsesquioxane material.
 24. The intermediate semiconductor devicestructure of claim 19, wherein the silicon dioxide-based material isselected from the group consisting of hydrogen silsesquioxane, methylsilsesquioxane, polyhydrogen silsesquioxane, hydrio polysilsesquioxane,methyl polysilsesquioxane, and phenyl polysilsesquioxane.
 25. Theintermediate semiconductor device structure of claim 19, wherein the caplayer comprises a material that prevents radiation from passing into thephotopatternable layer.
 26. The intermediate semiconductor devicestructure of claim 19, wherein the cap layer comprises a dielectricantireflective coating, a bottom antireflective coating, or a metalcoating.
 27. The intermediate semiconductor device structure of claim26, wherein the material used in the cap layer is selected from thegroup consisting of amorphous carbon, silicon carbide, titanium nitride,silicon nitride, and silicon oxynitride.
 28. The intermediatesemiconductor device structure of claim 19, wherein the cap layer is ofsufficient thickness to prevent radiation from passing into thephotopatternable layer.
 29. The intermediate semiconductor devicestructure of claim 19, wherein the cap layer has a thickness of greaterthan approximately 10 nm.
 30. The intermediate semiconductor devicestructure of claim 19, wherein the photoresist layer comprises aphotoresist material capable of providing a high resolution pattern. 31.The intermediate semiconductor device structure of claim 19, wherein thephotoresist layer comprises a photoresist material sensitive to awavelength from approximately 100 nm to approximately 500 nm.
 32. Theintermediate semiconductor device structure of claim 19, wherein thephotoresist layer comprises a photoresist material sensitive to awavelength of approximately 193 nm or approximately 248 nm.
 33. Theintermediate semiconductor device structure of claim 19, wherein atleast a portion of the photopatternable layer comprises thesilicon-dioxide based material.
 34. The intermediate semiconductordevice structure of claim 33, wherein the silicon dioxide-based materialhas been removed from the photopatternable layer.
 35. An intermediatesemiconductor device structure, comprising: a semiconductor substrate; aphotopatternable layer formed over the semiconductor substrate, at leasta portion of the photopatternable layer converted to a silicondioxide-based material; a cap layer formed over at least a portion ofthe photopatternable layer; and a photoresist layer formed over at leasta portion of the cap layer.
 36. The intermediate semiconductor devicestructure of claim 35, wherein the photopatternable layer comprises anorganosilicon photoresist material selected from the group consisting ofsilicon polymer, a polysilyne compound, and a polysilazane compound. 37.The intermediate semiconductor device structure of claim 35, wherein thephotopatternable layer comprises a photoacid generator.
 38. Theintermediate semiconductor device structure of claim 35, wherein the atleast a portion of the photopatternable layer converted to the silicondioxide-based material comprises silicon dioxide or alkylatedderivatives thereof.
 39. The intermediate semiconductor device structureof claim 35, wherein the at least a portion of the photopatternablelayer converted to the silicon dioxide-based material comprises asilsesquioxane material.
 40. The intermediate semiconductor devicestructure of claim 35, wherein the silicon dioxide-based material isselected from the group consisting of hydrogen silsesquioxane, methylsilsesquioxane, polyhydrogen silsesquioxane, hydrio polysilsesquioxane,methyl polysilsesquioxane, and phenyl polysilsesquioxane.
 41. Theintermediate semiconductor device structure of claim 35, wherein the caplayer comprises a material that prevents radiation from passing into thephotopatternable layer.
 42. The intermediate semiconductor devicestructure of claim 35, wherein the cap layer comprises a dielectricantireflective coating, a bottom antireflective coating, or a metalcoating.
 43. The intermediate semiconductor device structure of claim35, wherein the material used in the cap layer is selected from thegroup consisting of amorphous carbon, silicon carbide, titanium nitride,silicon nitride, and silicon oxynitride.
 44. The intermediatesemiconductor device structure of claim 35, wherein the cap layer is ofsufficient thickness to prevent radiation from passing into thephotopatternable layer.
 45. The intermediate semiconductor devicestructure of claim 35, wherein the cap layer is greater thanapproximately 10 nm thick.
 46. The intermediate semiconductor devicestructure of claim 35, wherein the photoresist layer comprises aphotoresist material capable of providing a high resolution pattern. 47.The intermediate semiconductor device structure of claim 35, wherein thephotoresist layer comprises a photoresist material sensitive to awavelength from approximately 100 nm to approximately 500 nm.
 48. Theintermediate semiconductor device structure of claim 35, wherein thephotoresist layer comprises a photoresist material sensitive to awavelength of approximately 193 nm or approximately 248 nm.